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| LH531000B-S FEATURES * 131,072 words x 8 bit organization * Access time: 500 ns (MAX.) * Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 W (MAX.) * Mask-programmable control pin: Pin 20 = CE/OE/OE * Static operation * Three-state outputs * Low power supply: 2.6 V to 3.6 V * Package: 28-pin, 450-mil SOP CMOS 1M (128K x 8) 3 V-Drive MROM DESCRIPTION The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 28-PIN SOP TOP VIEW A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 A16 A10 CE/OE/OE D7 D6 D5 D4 D3 531000BS-1 Figure 1. Pin Connections for DIP Package 1 LH531000B-S CMOS 1M MROM A16 22 A15 1 A14 27 A13 26 A10 21 A9 24 A8 25 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 ADDRESS DECODER ADDRESS BUFFER A12 2 A11 23 MEMORY MATRIX (131,072 x 8) COLUMN SELECTOR SENSE AMPLIFIER CE BUFFER TIMING GENERATOR CE/OE/OE 20 OE BUFFER OUTPUT BUFFER 28 14 VCC GND 11 D0 12 D1 13 D2 15 D3 16 D4 17 D5 18 D6 19 D7 531000BS-2 Figure 2. LH531000B-S Block Diagram PIN DESCRIPTION SIGNAL PIN NAME NOTE SIGNAL PIN NAME NOTE A0 - A16 D0 - D7 CE/OE/OE Address input Data output Chip Enable input or Output Enable input VCC GND 1 Power supply (2.6 V to 3.6 V) Ground NOTE: 1. Active level of CE/OE/OE is mask-programmable. 2 CMOS 1M MROM LH531000B-S TRUTH TABLE CE OE/OE MODE SUPPLY CURRENT H L - - - - L/H H/L High-Z Output High-Z Output Standby Operating Operating ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Supply voltage Input voltage Output voltage Operating temperature Storage temperature VCC VIN VOUT Topr Tstg -0.3 to +7.0 -0.3 to VCC + 0.3 -0.3 to VCC + 0.3 0 to +70 - 65 to +150 V V V C C RECOMMENDED OPERATING CONDITIONS (TA = 0C to +70C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage VCC 2.6 3.6 V DC CHARACTERISTICS (VCC = 2.6 V to 3.6 V, TA = 0C to +70C) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT NOTE Input `Low' voltage Input `High' voltage Output `Low' voltage Output `High' voltage Input leakage current Output leakage current Operating current Standby current Input capacitance Output capacitance NOTE: 1. CE/OE = VIH, OE = VIL 2. Outputs open VIL V IH VOL VOH | ILI | | ILO | ICC ISB CIN COUT I OL = 400 A I OH = -100 A V IN = 0 V to VCC V OUT = 0 V to VCC t RC = 500 ns CE = VCC - 0.2 V f = 1 MHz T A = 25C -0.3 0.8 x VCC 0.8 x VCC 0.4 VCC + 0.3 0.4 10 10 18 30 10 10 V V V V A A mA A pF pF 1 2 AC CHARACTERISTICS (VCC = 2.6 V to 3.6 V, TA = 0C to +70C) PARAMETER SYMBOL MIN. MAX. UNIT NOTE Read cycle time Address access time Chip enable access time Output enable delay time Output hold time CE to output in High-Z OE to output in High-Z tRC tAA tACE tOE tOH tCHZ tOHZ 500 500 500 200 10 150 ns ns ns ns ns ns ns 1 NOTE: 1. This is the time required for the output to become high-impedance. 3 LH531000B-S CMOS 1M MROM AC TEST CONDITIONS PARAMETER RATING Input voltage amplitude Input rise/fall time Input/output reference level Output load condition 0.4 V to (0.8 x VCC) V 10 ns 1.5 V 1TTL + 100 pF CAUTION To stabilize the power supply, it is recommended that a high-frequency bypass capacitor be connected between the VCC pin and the GND pin. tRC A0 - A16 tAA (NOTE) CE tACE (NOTE) OE OE tOE (NOTE) tOHZ tOH tCHZ D0 - D 7 NOTE: The output data becomes valid when the last intervals, tAA, tACE, or tOE, have concluded. DATA VALID 531000BS-3 Figure 3. Timing Diagram 4 CMOS 1M MROM LH531000B-S PACKAGE DIAGRAM 28SOP (SOP028-P-0450) 1.27 [0.050] TYP. 1.70 [0.067] 15 8.80 [0.346] 8.40 [0.331] 12.40 [0.488] 11.60 [0.457] 0.50 [0.020] 0.30 [0.012] 28 10.60 [0.417] 1 18.20 [0.717] 17.80 [0.701] 14 1.70 [0.067] 0.20 [0.008] 0.10 [0.004] 0.15 [0.006] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040] DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28SOP 28-pin, 450-mil SOP ORDERING INFORMATION LH531000B Device Type N Package -S Low-Voltage Operation 28-pin, 450-mil SOP (SOP028-P-0450) CMOS 1M (128K x 8) Mask-Programmable ROM Example: LH531000BN-S (CMOS 1M (128K x 8) Mask-Programmable ROM, Low-Voltage Operation, 28-pin, 450-mil SOP) 531000BS-4 5 |
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